Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. - Stanislav Tyaginov; Viktor Sverdlov; Ivan A. Starkov; Wolfgang Gös; Tibor Grasser (Microelectron. Reliab., 2009)

Interface traps density-of-states as a vital component for hot-carrier degradation modeling. - Stanislav Tyaginov; Ivan A. Starkov; Oliver Triebl; Johann Cervenka; C. Jungemann; Sara Carniello; Jong Mun Park; Hubert Enichlmair; Markus Karner; Ch. Kernstock; Ehrenfried Seebacher; Rainer Minixhofer; et al. (Microelectron. Reliab., 2010)

An analytical approach for physical modeling of hot-carrier induced degradation. - Stanislav Tyaginov; Ivan A. Starkov; Hubert Enichlmair; C. Jungemann; Jong Mun Park; Ehrenfried Seebacher; R. L. de Orio; Hajdin Ceric; Tibor Grasser (Microelectron. Reliab., 2011)

Origins and implications of increased channel hot carrier variability in nFinFETs. - Ben Kaczer; Jacopo Franco; M. Cho; Tibor Grasser; Philippe J. Roussel; Stanislav Tyaginov; M. Bina; Yannick Wimmer; Luis-Miguel Procel; Lionel Trojman; Felice Crupi; Gregory Pitner; et al. (IRPS, 2015)

Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. - Prateek Sharma; Stanislav Tyaginov; Yannick Wimmer; Florian Rudolf; Karl Rupp; Hubert Enichlmair; J. H. Park; Hajdin Ceric; Tibor Grasser (Microelectron. Reliab., 2015)

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. - Prateek Sharma; Stanislav Tyaginov; Stewart E. Rauch; Jacopo Franco; Ben Kaczer; Alexander Makarov; Mikhail I. Vexler; Tibor Grasser (ESSDERC, 2016)

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. - Alexander Makarov; Dimitri Linten; Stanislav Tyaginov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Markus Jech; Tibor Grasser (ESSDERC, 2019)

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. - Alexander Makarov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Tibor Grasser; Dimitri Linten; Stanislav Tyaginov (IRPS, 2019)

Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Zlatan Stanojevic; Alexander Makarov; Adrian Vaisman Chasin; Erik Bury; Hans Mertens; Dimitri Linten; Guido Groeseneken (IRPS, 2019)

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. - Alexander Grill; Erik Bury; Jakob Michl; Stanislav Tyaginov; Dimitri Linten; Tibor Grasser; Bertrand Parvais; Ben Kaczer; Michael Waltl; Iuliana P. Radu (IRPS, 2020)

A Compact Physics Analytical Model for Hot-Carrier Degradation. - Stanislav Tyaginov; Alexander Grill; Michiel Vandemaele; Tibor Grasser; Geert Hellings; Alexander Makarov; Markus Jech; Dimitri Linten; Ben Kaczer (IRPS, 2020)

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. - Michiel Vandemaele; Kai-Hsin Chuang; Erik Bury; Stanislav Tyaginov; Guido Groeseneken; Ben Kaczer (IRPS, 2020)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Physics-based device aging modelling framework for accurate circuit reliability assessment. - Zhicheng Wu; Jacopo Franco; Brecht Truijen; Philippe Roussel; Stanislav Tyaginov; Michiel Vandemaele; Erik Bury; Guido Groeseneken; Dimitri Linten; Ben Kaczer (IRPS, 2021)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model. - Yang Xiang; Stanislav Tyaginov; Michiel Vandemaele; Zhicheng Wu; Jacopo Franco; Erik Bury; Brecht Truijen; Bertrand Parvais; Dimitri Linten; Ben Kaczer (IRPS, 2021)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. - Alexander Grill; V. John; Jakob Michl; A. Beckers; Erik Bury; Stanislav Tyaginov; Bertrand Parvais; Adrian Vaisman Chasin; Tibor Grasser; Michael Waltl; Ben Kaczer; Bogdan Govoreanu (IRPS, 2022)

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. - Stanislav Tyaginov; Aryan Afzalian; Alexander Makarov; Alexander Grill; Michiel Vandemaele; Maksim Cherenev; Mikhail I. Vexler; Geert Hellings; Ben Kaczer (IRPS, 2022)

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. - Stanislav Tyaginov; Alexander Makarov; Al-Moatasem Bellah El-Sayed; Adrian Vaisman Chasin; Erik Bury; Markus Jech; Michiel Vandemaele; Alexander Grill; An De Keersgieter; Mikhail I. Vexler; Geert Eneman; Ben Kaczer (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Reliability challenges in Forksheet Devices: (Invited Paper). - Erik Bury; Michiel Vandemaele; Jacopo Franco; Adrian Chasin; Stanislav Tyaginov; A. Vandooren; Romain Ritzenthaler; Hans Mertens; Javier Diaz-Fortuny; N. Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2023)

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. - L. Panarella; Ben Kaczer; Quentin Smets; Devin Verreck; Tom Schram; Daire Cott; Dennis Lin; Stanislav Tyaginov; I. Asselberghs; Cesar J. Lockhart de la Rosa; Gouri Sankar Kar; Valeri Afanas'ev (IRPS, 2023)

Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. - Pablo Saraza-Canflanca; Dishant Sangani; Javier Diaz-Fortuny; Stanislav Tyaginov; Georges G. E. Gielen; Erik Bury; Ben Kaczer (IRPS, 2024)

A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. - Dishant Sangani; Michiel Vandemaele; Stanislav Tyaginov; Erik Bury; Ben Kaczer; Georges G. E. Gielen (IRPS, 2025)