Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. - M. Da Rold; Eddy Simoen; Sofie Mertens; Marc Schaekers; G. Badenes; Stefaan Decoutere (Microelectron. Reliab., 2001)

An easy-to-use mismatch model for the MOS transistor. - Jeroen A. Croon; Maarten Rosmeulen; Stefaan Decoutere; Willy Sansen; Herman E. Maes (IEEE J. Solid State Circuits, 2002)

Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors. - Snezana Jenei; Bart K. J. C. Nauwelaers; Stefaan Decoutere (IEEE J. Solid State Circuits, 2002)

A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor. - Dimitri Linten; Xiao Sun; Geert Carchon; Wutthinan Jeamsaksiri; Abdelkarim Mercha; Javier Ramos; Snezana Jenei; Lars Aspemyr; Andries J. Scholten; Piet Wambacq; Stefaan Decoutere; Stéphane Donnay; et al. (CICC, 2004)

RF ESD protection strategies - the design and performance trade-off challenges. - Philippe Jansen; Steven Thijs; Dimitri Linten; M. I. Natarajan; Vesselin K. Vassilev; Mingxu Liu; Ann Concannon; David Trémouilles; Takeshi Nakaie; Masanori Sawada; Vladislav A. Vashchenko; Marcel ter Beek; et al. (CICC, 2005)

Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors. - Dimitri Linten; Xiao Sun; Steven Thijs; M. I. Natarajan; Abdelkarim Mercha; Geert Carchon; Piet Wambacq; Takeshi Nakaie; Stefaan Decoutere (CICC, 2005)

24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors. - Olivier Dupuis; Xiao Sun; Geert Carchon; Philippe Soussan; Mattias Ferndahl; Stefaan Decoutere; Walter De Raedt (ESSCIRC, 2005)

RFCV Test Structure Design for a Selected Frequency Range. - Wutthinan Jeamsaksiri; Abdelkarim Mercha; Javier Ramos; Stefaan Decoutere; Florence Cubaynes (IEICE Trans. Electron., 2005)

Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors. - Dimitri Linten; Xiao Sun; Geert Carchon; Wutthinan Jeamsaksiri; Abdelkarim Mercha; Javier Ramos; Snezana Jenei; Piet Wambacq; Morin Dehan; Lars Aspemyr; Andries J. Scholten; Stefaan Decoutere; et al. (IEEE J. Solid State Circuits, 2005)

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS. - Dimitri Linten; Steven Thijs; Mahadeva Iyer Natarajan; Piet Wambacq; Wutthinan Jeamsaksiri; Javier Ramos; Abdelkarim Mercha; Snezana Jenei; Stéphane Donnay; Stefaan Decoutere (IEEE J. Solid State Circuits, 2005)

Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges. - Stefaan Decoutere; Piet Wambacq; Vaidy Subramanian; Jonathan Borremans; Abdelkarim Mercha (CICC, 2006)

A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process. - Geert Van der Plas; Stefaan Decoutere; Stéphane Donnay (ISSCC, 2006)

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. - Steven Thijs; M. Natarajan Iyer; Dimitri Linten; Wutthinan Jeamsaksiri; T. Daenen; Robin Degraeve; Andries J. Scholten; Stefaan Decoutere; Guido Groeseneken (Microelectron. Reliab., 2006)

An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs. - Bertrand Parvais; S. Hu; Morin Dehan; Abdelkarim Mercha; Stefaan Decoutere (CICC, 2007)

FinFET technology for analog and RF circuits. - Bertrand Parvais; Vaidyanathan Subramanian; Abdelkarim Mercha; Morin Dehan; Piet Wambacq; Willy Sansen; Guido Groeseneken; Stefaan Decoutere (ICECS, 2007)

The Potential of FinFETs for Analog and RF Circuit Applications. - Piet Wambacq; Bob Verbruggen; Karen Scheir; Jonathan Borremans; Morin Dehan; Dimitri Linten; Vincent De Heyn; Geert Van der Plas; Abdelkarim Mercha; Bertrand Parvais; Cedric Gustin; Vaidyanathan Subramanian; et al. (IEEE Trans. Circuits Syst. I Regul. Pap., 2007)

A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS. - Jonathan Borremans; Piet Wambacq; Maarten Kuijk; Geert Carchon; Stefaan Decoutere (ISSCC, 2008)

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. - Piet Wambacq; Abdelkarim Mercha; Karen Scheir; Bob Verbruggen; Jonathan Borremans; Vincent De Heyn; Steven Thijs; Dimitri Linten; Geert Van der Plas; Bertrand Parvais; Morin Dehan; Stefaan Decoutere; et al. (ISSCC, 2008)

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. - Stefaan Decoutere; Stefaan Van Huylenbroeck; Bernd Heinemann; Alexander Fox; Pascal Chevalier 002; Alain Chantre; Thomas F. Meister; Klaus Aufinger; Michael Schröter (CICC, 2009)

FinFET RF receiver building blocks operating above 10 GHz. - Domagoj Siprak; Piet Wambacq; Bertrand Parvais; Abdelkarim Mercha; Michael Fulde; Jesenka Veledar Kruger; Morin Dehan; Stefaan Decoutere (ESSCIRC, 2009)

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. - Dimitri Linten; Steven Thijs; Jonathan Borremans; Morin Dehan; David Trémouilles; Mirko Scholz; M. I. Natarajan; Piet Wambacq; Stefaan Decoutere; Guido Groeseneken (Microelectron. Reliab., 2009)

45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors. - Wen-Chieh Wang; Zue-Der Huang; Geert Carchon; Abdelkarim Mercha; Stefaan Decoutere; Walter De Raedt; Chung-Yu Wu (ISCAS, 2010)

Identifying the Bottlenecks to the RF Performance of FinFETs. - Vaidyanathan Subramanian; Abdelkarim Mercha; Bertrand Parvais; Morin Dehan; Guido Groeseneken; Willy M. C. Sansen; Stefaan Decoutere (VLSI Design, 2010)

GaN-based HEMTs tested under high temperature storage test. - Denis Marcon; Xuanwu Kang; John Viaene; Marleen Van Hove; Puneet Srivastava; Stefaan Decoutere; Robert Mertens 004; Gustaaf Borghs (Microelectron. Reliab., 2011)

High temperature behaviour of GaN-on-Si high power MISHEMT devices. - Dirk Wellekens; Rafael Venegas; Xuanwu Kang; Mohammed Zahid; Tian-Li Wu; Denis Marcon; Puneet Srivastava; Marleen Van Hove; Stefaan Decoutere (ESSDERC, 2012)

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. - Denis Marcon; John Viaene; Paola Favia; Hugo Bender; Xuanwu Kang; Silvia Lenci; Steve Stoffels; Stefaan Decoutere (Microelectron. Reliab., 2012)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. - Jie Hu; Steve Stoffels; Silvia Lenci; Nicolo Ronchi; Rafael Venegas; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. - Tian-Li Wu; Denis Marcon; Steve Stoffels; Shuzhen You; Brice De Jaeger; Marleen Van Hove; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. - Tian-Li Wu; Denis Marcon; Brice De Jaeger; Marleen Van Hove; Benoit Bakeroot; Steve Stoffels; Guido Groeseneken; Stefaan Decoutere; Robin Roelofs (IRPS, 2015)

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. - Isabella Rossetto; Matteo Meneghini; Davide Bisi; Alessandro Barbato; Marleen Van Hove; Denis Marcon; Tian-Li Wu; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. - Ales Chvála; Juraj Marek; Patrik Pribytny; Alexander Satka; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Daniel Donoval (Microelectron. Reliab., 2017)

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. - Matteo Borga; Matteo Meneghini; Steve Stoffels; Marleen Van Hove; M. Zhao; X. Li; Stefaan Decoutere; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. - Shuzhen You; Xiangdong Li; Stefaan Decoutere; Guido Groeseneken; Zhanfei Chen; Jun Liu; Yuki Yamashita; Kazutoshi Kobayashi (ESSDERC, 2019)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. - Yuki Yamashita; Steve Stoffels; Niels Posthuma; Karen Geens; Xiangdong Li; Jun Furuta; Stefaan Decoutere; Kazutoshi Kobayashi (IEICE Electron. Express, 2019)

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. - Kalparupa Mukherjee; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini; Shuzhen You; Karen Geens; Matteo Borga; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2020)

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. - Eliana Acurio; Lionel Trojman; Brice De Jaeger; Benoit Bakeroot; Stefaan Decoutere (IRPS, 2021)

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. - Elena Fabris; Matteo Borga; Niels Posthuma; Ming Zhao; Brice De Jaeger; Shuzhen You; Stefaan Decoutere; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni (IRPS, 2021)

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply. - Junichiro Nagao; Urmimala Chatterjee; Xiangdong Li; Jun Furuta; Stefaan Decoutere; Kazutoshi Kobayashi (IEICE Electron. Express, 2021)

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. - Olga Syshchyk; Thibault Cosnier; Zheng-Hong Huang; Deepthi Cingu; Dirk Wellekens; Anurag Vohra; Karen Geens; Pavan Vudumula; Urmimala Chatterjee; Stefaan Decoutere; Tian-Li Wu; Benoit Bakeroot (ESSDERC, 2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. - Andrea Bettini; Thibault Cosnier; Alessandro Magnani; Olga Syshchyk; Matteo Borga; Stefaan Decoutere; Andrea Neviani (PRIME, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)