Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. - Evelyn T. Breyer; Halid Mulaosmanovic; Jens Trommer; Thomas Melde; Stefan Dünkel; Martin Trentzsch; Sven Beyer; Thomas Mikolajick; Stefan Slesazeck (ESSDERC, 2019)

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning. - Carlo Cagli; Luca Perniola; Fred Gaillard; Stefan Dünkel; Thomas Melde; B. Mueller; Martin Trentzsch; Sven Wittek; Sven Beyer (IRPS, 2019)

Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology. - Thomas Melde; Martin Trentzsch; Stefan Dünkel; Ralf Richter; Michael Otto 003; H. Giesler; Francois Weisbuch; N. Weddeler; Sven Beyer (IMW, 2021)

Hardware Functional Obfuscation With Ferroelectric Active Interconnects. - Tongguang Yu; Yixin Xu 001; Shan Deng; Zijian Zhao 001; Nicholas Jao; You Sung Kim; Stefan Dünkel; Sven Beyer; Kai Ni 004; Sumitha George; Vijaykrishnan Narayanan (CoRR, 2021)

Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process. - Nicki Mika; Thomas Melde; Stefan Dünkel; Michael Otto 003; Francois Weisbuch; Peter Krottenthaler; Thomas Mikolajick (ESSDERC, 2022)

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. - Zhouhang Jiang; Yi Xiao 008; Swetaki Chatterjee; Halid Mulaosmanovic; Stefan Dünkel; Steven Soss; Sven Beyer; Rajiv V. Joshi; Yogesh Singh Chauhan; Hussam Amrouch; Vijaykrishnan Narayanan; Kai Ni 004 (VLSI Technology and Circuits, 2022)

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines. - Yixin Xu 001; Zijian Zhao 001; Yi Xiao 008; Tongguang Yu; Halid Mulaosmanovic; Dominik Kleimaier; Stefan Dünkel; Sven Beyer; Xiao Gong; Rajiv V. Joshi; X. Sharon Hu; Shixian Wen; et al. (CoRR, 2022)

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. - Franz Müller 001; Sourav De 002; Maximilian Lederer; Raik Hoffmann; Ricardo Olivo; Thomas Kämpfe; Konrad Seidel; Tarek Ali; Halid Mulaosmanovic; Stefan Dünkel; Johannes Müller; Sven Beyer; et al. (IMW, 2023)

FeFET-based MirrorBit cell for High-density NVM storage. - Paritosh Meihar; Rowtu Srinu; Vivek Saraswat; Sandip Lashkare; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Udayan Ganguly (CoRR, 2023)

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET. - Zijian Zhao 001; Shan Deng; Swetaki Chatterjee; Zhouhang Jiang; Muhammad Shaffatul Islam; Yi Xiao 008; Yixin Xu 001; Scott Meninger; Mohamed Mohamed 011; Rajiv V. Joshi; Yogesh Singh Chauhan; Halid Mulaosmanovic; et al. (CoRR, 2023)

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications. - Paritosh Meihar; Rowtu Srinu; Sandip Lashkare; Ajay Kumar Singh; Halid Mulaosmanovic; Veeresh Deshpande; Stefan Dünkel; Sven Beyer; Udayan Ganguly (CoRR, 2023)

Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator. - Vivek Parmar; Franz Müller 001; Jing-Hua Hsuen; Sandeep Kaur Kingra; Nellie Laleni; Yannick Raffel; Maximilian Lederer; Alptekin Vardar; Konrad Seidel; Taha Soliman; Tobias Kirchner; Tarek Ali; et al. (Adv. Intell. Syst., 2023)

Charge trapping challenges of CMOS embedded complementary FeFETs. - Sven Beyer; Dominik Kleimaier; Stefan Dünkel; Halid Mulaosmanovic; Steven Soss; Johannes Müller; Zhouhang Jiang; Kai Ni 004; Thomas Mikolajick; Haidi Zhou (IMW, 2024)

Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG. - Ralf Richter; Stefan Dünkel; Bert Müller; Frank Mauersberger; Sven Wittek; Sven Beyer; Jana Böhme; Uwe Ritter; Violetta Sessi; Zhen Xu; Maximilian Drescher; Jinho Kim; et al. (IMW, 2024)

Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out. - Omkar Phadke; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Shimeng Yu (IRPS, 2024)

Charge Trapping and Endurance Degradation in Ferroelectric Field-Effect Transistors. - Dominik Kleimaier; Stefan Dünkel; Halid Mulaosmanovic; Johannes Müller; Sven Beyer; Viktor Havel; Thomas Mikolajick (NVMTS, 2024)

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. - Zijian Zhao 001; Sola Woo; Khandker Akif Aabrar; Sharadindu Gopal Kirtania; Zhouhang Jiang; Shan Deng; Yi Xiao 008; Halid Mulaosmanovic; Stefan Dünkel; Dominik Kleimaier; Steven Soss; Sven Beyer; et al. (CoRR, 2024)

Reconfigurable Time-Domain In-Memory Computing Marco using CAM FeFET with Multilevel Delay Calibration in 28 nm CMOS. - Jeries Mattar; Mor M. Dahan; Stefan Dünkel; Halid Mulaosmanovic; Sven Beyer; Eilam Yalon; Nicolás Wainstein (CoRR, 2025)

A Bio-inspired Asymmetric Double-Gate Ferroelectric FET for Emulating Astrocyte and Dendrite Dynamics in Neuromorphic Systems. - Zhouhang Jiang; A. N. M. Nafiul Islam; Zhuangyu Han; Zijian Zhao 001; Franz Müller 001; Jiahui Duan; Halid Mulaosmanovic; Stefan Dünkel; Sven Beyer; Sourav Dutta; Vijaykrishnan Narayanan; Thomas Kämpfe; et al. (CoRR, 2025)