New color sensor concept based on single spectral tunable photodiode. - Andre Wachowiak; Stefan Slesazeck; Paul Jordan; Jürgen Holz; Thomas Mikolajick (ESSDERC, 2013)

On the voltage scaling potential of SONOS non-volatile memory transistors. - Johannes Ocker; Stefan Slesazeck; Thomas Mikolajick; S. Buschbeck; S. Günther; E. Yurchuk; R. Hoffmann; V. Beyer (ESSDERC, 2015)

Stability analysis supports memristor circuit design. - Alon Ascoli; Ronald Tetzlaff; Stefan Slesazeck; Hannes Mähne; Thomas Mikolajick (ISCAS, 2015)

Nonlinear Dynamics of a Locally-Active Memristor. - Alon Ascoli; Stefan Slesazeck; Hannes Mähne; Ronald Tetzlaff; Thomas Mikolajick (IEEE Trans. Circuits Syst. I Regul. Pap., 2015)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)

Versatile resistive switching in niobium oxide. - Thomas Mikolajick; H. Wylezich; Hannes Maehne; Stefan Slesazeck (ISCAS, 2016)

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Thomas Kämpfe; Lukas M. Eng; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2017)

Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches. - Stefan Slesazeck; H. Wylezich; Thomas Mikolajick (LASCAS, 2017)

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick (NVMTS, 2017)

Computing with ferroelectric FETs: Devices, models, systems, and applications. - Ahmedullah Aziz; Evelyn T. Breyer; An Chen; Xiaoming Chen 003; Suman Datta; Sumeet Kumar Gupta; Michael Hoffmann 008; Xiaobo Sharon Hu; Adrian M. Ionescu; Matthew Jerry; Thomas Mikolajick; Halid Mulaosmanovic; et al. (DATE, 2018)

Domain Formation in Ferroelectric Negative Capacitance Devices. - Michael Hoffmann 008; Stefan Slesazeck; Thomas Mikolajick (DRC, 2018)

Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks. - Benjamin Max; Michael Hoffmann 008; Stefan Slesazeck; Thomas Mikolajick (ESSDERC, 2018)

Embedding hafnium oxide based FeFETs in the memory landscape. - Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick (ICICDT, 2018)

Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology. - Evelyn T. Breyer; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (ISCAS, 2018)

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices. - Ian O'Connor; Mayeul Cantan; Cédric Marchand 002; Bertrand Vilquin; Stefan Slesazeck; Evelyn T. Breyer; Halid Mulaosmanovic; Thomas Mikolajick; Bastien Giraud; Jean-Philippe Noel; Adrian M. Ionescu; Igor Stolichnov (VLSI-SoC, 2018)

Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation. - Michael Hoffmann 008; Stefan Slesazeck; Thomas Mikolajick (DRC, 2019)

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. - Thomas Mikolajick; Halid Mulaosmanovic; Michael Hoffmann 008; Benjamin Max; Terence Mittmann; Uwe Schroeder; Stefan Slesazeck (DRC, 2019)

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. - Evelyn T. Breyer; Halid Mulaosmanovic; Jens Trommer; Thomas Melde; Stefan Dünkel; Martin Trentzsch; Sven Beyer; Thomas Mikolajick; Stefan Slesazeck (ESSDERC, 2019)

IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. - Sabine Kolodinski; Boli Peng; Ciro Esposito; Yves Zimmermann; Michael Schröter; Xin Xu; Paolo Valerio Testa; Corrado Carta; Frank Ellinger; Steffen Lehmann; M. Drescher; Clemens Mart; et al. (ESSDERC, 2019)

Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs. - Jens Trommer; Maik Simon; Stefan Slesazeck; Walter M. Weber; Thomas Mikolajick (ESSDERC, 2019)

Adoption of 2T2C ferroelectric memory cells for logic operation. - Taras Ravsher; Halid Mulaosmanovic; Evelyn T. Breyer; Viktor Havel; Thomas Mikolajick; Stefan Slesazeck (ICECS, 2019)

Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors. - Bharathwaj Suresh; Martin Bertele; Evelyn T. Breyer; Philipp Klein; Halid Mulaosmanovic; Thomas Mikolajick; Stefan Slesazeck; Elisabetta Chicca (ICECS, 2019)

Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. - Patrick D. Lomenzo; Stefan Slesazeck; Michael Hoffmann 008; Thomas Mikolajick; Uwe Schroeder; Benjamin Max (NVMTS, 2019)

Pattern Formation With Locally Active S-Type NbOx Memristors. - Martin Weiher; Melanie Herzig; Ronald Tetzlaff; Alon Ascoli; Thomas Mikolajick; Stefan Slesazeck (IEEE Trans. Circuits Syst. I Regul. Pap., 2019)

Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays. - Evelyn T. Breyer; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (ISCAS, 2020)

FeFET based Logic-in-Memory: an overview. - Cédric Marchand 002; Ian O'Connor; Mayeul Cantan; Evelyn T. Breyer; Stefan Slesazeck; Thomas Mikolajick (DTIS, 2021)

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. - Riccardo Fontanini; Justine Barbot; Mattia Segatto; Suzanne Lancaster; Quang T. Duong; Francesco Driussi; Laurent Grenouillet; François Triozon; Jean Coignus; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2021)

Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic. - Dietmar Fey; John Reuben; Stefan Slesazeck (ICECS, 2021)

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. - Halid Mulaosmanovic; Patrick D. Lomenzo; Uwe Schroeder; Stefan Slesazeck; Thomas Mikolajick; Benjamin Max (IRPS, 2021)

Ferroelectric Tunneling Junctions for Edge Computing. - Erika Covi; Quang T. Duong; Suzanne Lancaster; Viktor Havel; Jean Coignus; Justine Barbot; Ole Richter; Philipp Klein; Elisabetta Chicca; Laurent Grenouillet; Athanasios Dimoulas; Thomas Mikolajick; et al. (ISCAS, 2021)

Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors. - Alon Ascoli; Martin Weiher; Ronald Tetzlaff; Melanie Herzig; Stefan Slesazeck; Thomas Mikolajick (MOCAST, 2021)

2021 Roadmap on Neuromorphic Computing and Engineering. - Dennis V. Christensen; Regina Dittmann; Bernabé Linares-Barranco; Abu Sebastian; Manuel Le Gallo; Andrea Redaelli; Stefan Slesazeck; Thomas Mikolajick; Sabina Spiga; Stephan Menzel; Ilia Valov; Gianluca Milano; et al. (CoRR, 2021)

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. - Benjamin Max; Michael Hoffmann 008; Halid Mulaosmanovic; Stefan Slesazeck; Thomas Mikolajick (CoRR, 2021)

Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks. - Martin Weiher; Melanie Herzig; Ronald Tetzlaff; Alon Ascoli; Thomas Mikolajick; Stefan Slesazeck (IEEE Trans. Circuits Syst. I Regul. Pap., 2021)

Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. - Thomas Mikolajick; Uwe Schroeder; Stefan Slesazeck (DRC, 2022)

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing. - Suzanne Lancaster; Quang T. Duong; Erika Covi; Thomas Mikolajick; Stefan Slesazeck (ESSCIRC, 2022)

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions. - Mattia Segatto; Marco Massarotto; Suzanne Lancaster; Quang T. Duong; Antonio Affanni; Riccardo Fontanini; Francesco Driussi; Daniel Lizzit; Thomas Mikolajick; Stefan Slesazeck; David Esseni (ESSDERC, 2022)

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron. - Paolo Gibertini; Luca Fehlings; Suzanne Lancaster; Quang T. Duong; Thomas Mikolajick; Catherine Dubourdieu; Stefan Slesazeck; Erika Covi; Veeresh Deshpande (ICECS 2022, 2022)

An Analog Memristive and Memcapacitive Device for Neuromorphic Computing. - Eter Mgeladze; Melanie Herzig; Richard Schroedter; Ronald Tetzlaff; Thomas Mikolajick; Stefan Slesazeck (ICECS 2022, 2022)

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices. - Shyam Narayanan; Erika Covi; Viktor Havel; Charlotte Frenkel; Suzanne Lancaster; Quang T. Duong; Stefan Slesazeck; Thomas Mikolajick; Melika Payvand; Giacomo Indiveri (ISCAS, 2022)

Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device. - Richard Schroedter; Eter Mgeladze; Melanie Herzig; Alon Ascoli; Stefan Slesazeck; Thomas Mikolajick; Ronald Tetzlaff (ISCAS, 2022)

SPICE Compact Model for an Analog Switching Niobium Oxide Memristor. - Richard Schroedter; Ahmet Samil Demirkol; Alon Ascoli; Ronald Tetzlaff; Eter Mgeladze; Melanie Herzig; Stefan Slesazeck; Thomas Mikolajick (MOCAST, 2022)

2022 roadmap on neuromorphic computing and engineering. - Dennis V. Christensen; Regina Dittmann; Bernabé Linares-Barranco; Abu Sebastian; Manuel Le Gallo; Andrea Redaelli; Stefan Slesazeck; Thomas Mikolajick; Sabina Spiga; Stephan Menzel; Ilia Valov; Gianluca Milano; et al. (Neuromorph. Comput. Eng., 2022)

Ferroelectric-based synapses and neurons for neuromorphic computing. - Erika Covi; Halid Mulaosmanovic; Benjamin Max; Stefan Slesazeck; Thomas Mikolajick (Neuromorph. Comput. Eng., 2022)

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. - Mor M. Dahan; Evelyn T. Breyer; Stefan Slesazeck; Thomas Mikolajick; Shahar Kvatinsky (IEEE Trans. Circuits Syst. I Regul. Pap., 2022)

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. - Suzanne Lancaster; Mattia Segatto; Cláudia Silva; Benjamin Max; Thomas Mikolajick; David Esseni; Francesco Driussi; Stefan Slesazeck (DRC, 2023)

A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories. - John Reuben; Dietmar Fey; Stefan Slesazeck (MOCAST, 2023)

Hyper Dimensional Computing with Ferroelectric Tunneling Junctions. - Stefan Slesazeck; Suzanne Lancaster; John Reuben; Shima Hosseinzadeh; Dietmar Fey; Thomas Mikolajick (NANOARCH, 2023)

Focus issue on hafnium oxide based neuromorphic devices. - Stefan Slesazeck; Thomas Mikolajick (Neuromorph. Comput. Eng., 2023)

On-chip READ and WRITE Circuits for Multi-bit Ferroelectric Tunnel Junction Memory. - John Reuben; Suzanne Lancaster; Dietmar Fey; Stefan Slesazeck (NorCAS, 2024)

Roadmap to Neuromorphic Computing with Emerging Technologies. - Adnan Mehonic; Daniele Ielmini; Kaushik Roy 001; Onur Mutlu; Shahar Kvatinsky; Teresa Serrano-Gotarredona; Bernabé Linares-Barranco; Sabina Spiga; Sergey Savelev; Alexander G. Balanov; Nitin Chawla; Giuseppe Desoli; et al. (CoRR, 2024)

Edge of Chaos Induces a Hopf Bifurcation in a Bio-Inspired Thermally-Activated Memristor Oscillator. - Alon Ascoli; E. Gemo; D. Rossetti; Fernando Corinto; Michele Bonnin; Marco Gilli; Pier Paolo Civalleri; Ahmet Samil Demirkol; Nicolas Schmitt; Ioannis Messaris; Vasileios G. Ntinas; Dimitrios A. Prousalis; et al. (ISCAS, 2025)

Ndr Effects in a Locally-Active Memristor Induce Small-Signal Amplification in a Simple Cell. - Alon Ascoli; E. Gemo; Fernando Corinto; Michele Bonnin; Marco Gilli; Pier Paolo Civalleri; Ahmet Samil Demirkol; Ioannis Messaris; Vasileios G. Ntinas; Dimitrios A. Prousalis; Ronald Tetzlaff; Stefan Slesazeck; et al. (MOCAST, 2025)

Nucleation-Limited-Switching Based Compact Models for Hf-Based Ferroelectric Devices and Their Applications in Memory Arrays. - Chong Peng; Suzanne Lancaster; Luca Carpentieri; Athira Sunil; Thomas Mikolajick; Stefan Slesazeck (MOCAST, 2025)

Model-Based Write Algorithm for Memristive Crossbar Arrays. - Richard Schroedter; Ahmet Samil Demirkol; Ioannis Messaris; Christian Bruchatz; Eter Mgeladze; Stefan Slesazeck; Thomas Mikolajick; Ronald Tetzlaff (MOCAST, 2025)