Transport in kinked bi-layer graphene interconnects. - Bernat Terres; Nick Borgwardt; Jan Dauber; Christian Volk; Stephan Engels; Stefan Fringes; Peter Weber; Uwe Wichmann; Christoph Stampfer; Stefan Trellenkamp (NEMS, 2011)

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. - Lars Knoll; Qing-Tai Zhao; Stefan Trellenkamp; Anna Schäfer; K. K. Bourdelle; Siegfried Mantl (ESSDERC, 2012)

Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. - Simon Richter; Svetlana A. Vitusevich; Sergii Pud; Jing Li; Lars Knoll; Stefan Trellenkamp; Anna Schäfer; Steffi Lenk; Qing-Tai Zhao; Andreas Offenhäusser; Siegfried Mantl; Konstantin K. Bourdelle (ESSDERC, 2013)

Low-temperature compatible electrostatic comb-drive actuators with integrated graphene. - Matthias Goldsche; Tymofiy Khodkov; Pascal Kaienburg; Christoph Neumann; Christoph Stampfer; Stefan Trellenkamp; Gregor Mussler (NEMS, 2014)

Si n-TFETs on ultra thin body with suppressed ambipolarity. - Chang Liu; Qinghua Han; Gia Vinh Luong; Keyvan Narimani; Stefan Glass; Andreas T. Tiedemann; Stefan Trellenkamp; Wenjie Yu; Xi Wang; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2016)

Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. - Gia Vinh Luong; Sebastiano Strangio; Andreas T. Tiedemann; Patric Bernardy; Stefan Trellenkamp; Pierpaolo Palestri; Siegfried Mantl; Qing-Tai Zhao (ESSDERC, 2017)

SiGe Qubit Biasing with a Cryogenic CMOS DAC at mK Temperature. - Lea Schreckenberg; René Otten; Patrick Vliex; Ran Xue; Jhih-Sian Tu; Inga Seidler; Stefan Trellenkamp; Lars R. Schreiber; Hendrik Bluhm; Stefan van Waasen (ESSCIRC, 2023)