Cost-effective integration of an FN-programmed embedded flash memory into a 0.25mum SiGe: C RF-BiCMOS technology. - Alexander Fox; K. E. Ehwald; Peter Schley; Rainer Barth; Steffen Marschmeyer; C. Wolf; V. E. Stikanov; A. Gromovyy; A. Hudyryev (Microelectron. J., 2006)

A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology. - Dieter Knoll; Stefan Lischke; Lars Zimmermann; Bernd Heinemann; Daniel Micusík; P. Ostrovskyy; Georg Winzer; Marcel Kroh; Rainer Barth; Thomas Grabolla; K. Schulz; Mirko Fraschke; et al. (OFC, 2014)