Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. - Stephan Maroldt; Dirk Wiegner; Stanislav Vitanov; Vassil Palankovski; Rüdiger Quay; Oliver Ambacher (IEICE Trans. Electron., 2010)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)