Boundary element analysis of thermal fatigue effects on high power IGBT modules. - Zoubir Khatir; Stéphane Lefebvre (Microelectron. Reliab., 2004)

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. - Laurent Dupont 002; Zoubir Khatir; Stéphane Lefebvre; S. Bontemps (Microelectron. Reliab., 2006)

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. - M. Bouarroudj; Zoubir Khatir; Jean-Pierre Ousten; F. Badel; Laurent Dupont 002; Stéphane Lefebvre (Microelectron. Reliab., 2007)

Failure modes on low voltage power MOSFETs under high temperature application. - Laurent Dupont 002; Stéphane Lefebvre; M. Bouaroudj; Zoubir Khatir; Jean-Claude Faugières (Microelectron. Reliab., 2007)

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. - Zoubir Khatir; Stéphane Lefebvre; F. Saint-Eve (Microelectron. Reliab., 2007)

Estimation of SiC JFET temperature during short-circuit operations. - Mounira Berkani; Stéphane Lefebvre; Narjes Boughrara; Zoubir Khatir; Jean-Claude Faugières; Peter Friedrichs; Ali Haddouche (Microelectron. Reliab., 2009)

Characterisation of power modules ceramic substrates for reliability aspects. - S. Pietranico; S. Pommier; Stéphane Lefebvre; Zoubir Khatir; S. Bontemps (Microelectron. Reliab., 2009)

Ageing of SiC JFET transistors under repetitive current limitation conditions. - M. Bouarroudj-Berkani; D. Othman; Stéphane Lefebvre; S. Moumen; Zoubir Khatir; T. Ben Sallah (Microelectron. Reliab., 2010)

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. - Tien Anh Nguyen; Pierre-Yves Joubert; Stéphane Lefebvre; G. Chaplier; Lionel Rousseau (Microelectron. Reliab., 2011)

Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. - Amrane Oukaour; Boubekeur Tala-Ighil; Bertrand Pouderoux; M. Tounsi; M. Bouarroudj-Berkani; Stéphane Lefebvre; Bertrand Boudart (Microelectron. Reliab., 2011)

A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. - S. Pietranico; Stéphane Lefebvre; S. Pommier; M. Berkani Bouaroudj; S. Bontemps (Microelectron. Reliab., 2011)

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. - Vanessa Smet; François Forest; Jean-Jacques Huselstein; Frédéric Richardeau; Zoubir Khatir; Stéphane Lefebvre; Mounira Berkani (IEEE Trans. Ind. Electron., 2011)

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. - Yi Tian; Dejan Vasic; Stéphane Lefebvre (ISIE, 2012)

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. - D. Othman; M. Bouarroudj-Berkani; Stéphane Lefebvre; Ali Ibrahim; Zoubir Khatir; A. Bouzourene (Microelectron. Reliab., 2012)

Robustness of 1.2 kV SiC MOSFET devices. - D. Othman; Stéphane Lefebvre; Mounira Berkani; Zoubir Khatir; Ali Ibrahim; A. Bouzourene (Microelectron. Reliab., 2013)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. - Gilles Rostaing; Mounira Berkani; D. Mechouche; Denis Labrousse; Stéphane Lefebvre; Zoubir Khatir; Philippe Dupuy (Microelectron. Reliab., 2013)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. - Michele Riccio; Vincenzo d'Alessandro; Andrea Irace; Gilles Rostaing; Mounira Berkani; Stéphane Lefebvre; Philippe Dupuy (Microelectron. Reliab., 2014)

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. - Cheng Chen; Denis Labrousse; Stéphane Lefebvre; Mickael Petit; Cyril Buttay; Hervé Morel (Microelectron. Reliab., 2015)

In-depth investigation of metallization aging in power MOSFETs. - R. Ruffilli; Mounira Berkani; Philippe Dupuy; Stéphane Lefebvre; Y. Weber; Marc Legros (Microelectron. Reliab., 2015)

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. - Boubekeur Tala-Ighil; Jean-Lionel Trolet; Hamid Gualous; Philippe Mary; Stéphane Lefebvre (Microelectron. Reliab., 2015)

[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. - Matthieu Landel; Cyrille Gautier; Denis Labrousse; Stéphane Lefebvre (Microelectron. Reliab., 2016)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. - F. Boige; Frédéric Richardeau; David Trémouilles; Stéphane Lefebvre; G. Guibaud (Microelectron. Reliab., 2017)

Mechanisms of power module source metal degradation during electro-thermal aging. - R. Ruffilli; Mounira Berkani; Philippe Dupuy; Stéphane Lefebvre; Y. Weber; Marc Legros (Microelectron. Reliab., 2017)

Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. - Oriol Avino-Salvado; Hervé Morel; Cyril Buttay; Denis Labrousse; Stéphane Lefebvre (Microelectron. Reliab., 2018)

Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. - F. Boige; Frédéric Richardeau; Stéphane Lefebvre; Jean-Marc Blaquière; G. Guibaud; A. Bourennane (Microelectron. Reliab., 2018)

Effect of short circuit aging on safe operating area of SiC MOSFET. - Tien Anh Nguyen; Stéphane Lefebvre; Stephane Azzopardi (Microelectron. Reliab., 2018)

Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. - Yoann Pascal; Denis Labrousse; Mickael Petit; Stéphane Lefebvre; François Costa (Microelectron. Reliab., 2018)

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation. - F. Boige; Frédéric Richardeau; Stéphane Lefebvre; Marc Cousineau (Math. Comput. Simul., 2019)