Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. - Denis Marcon; John Viaene; Paola Favia; Hugo Bender; Xuanwu Kang; Silvia Lenci; Steve Stoffels; Stefaan Decoutere (Microelectron. Reliab., 2012)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. - Jie Hu; Steve Stoffels; Silvia Lenci; Nicolo Ronchi; Rafael Venegas; Shuzhen You; Benoit Bakeroot; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. - Tian-Li Wu; Denis Marcon; Steve Stoffels; Shuzhen You; Brice De Jaeger; Marleen Van Hove; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. - Tian-Li Wu; Denis Marcon; Brice De Jaeger; Marleen Van Hove; Benoit Bakeroot; Steve Stoffels; Guido Groeseneken; Stefaan Decoutere; Robin Roelofs (IRPS, 2015)

New fast distributed thermal model for analysis of GaN based power devices. - Vice Sodan; Federica Lidia Teresa Maggioni; Herman Oprins; Steve Stoffels; Martine Baelmans; Ingrid De Wolf (ESSDERC, 2016)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. - Ales Chvála; Juraj Marek; Patrik Pribytny; Alexander Satka; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Daniel Donoval (Microelectron. Reliab., 2017)

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. - Isabella Rossetto; Matteo Meneghini; Eleonora Canato; Marco Barbato; Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Andrea Natale Tallarico; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2017)

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. - Matteo Borga; Matteo Meneghini; Steve Stoffels; Marleen Van Hove; M. Zhao; X. Li; Stefaan Decoutere; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. - Steve Stoffels; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot; Andrea Natale Tallarico; Enrico Sangiorgi; Claudio Fiegna; J. Zheng; X. Ma; Matteo Borga; Elena Fabris; Matteo Meneghini; et al. (IRPS, 2019)

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. - Yuki Yamashita; Steve Stoffels; Niels Posthuma; Karen Geens; Xiangdong Li; Jun Furuta; Stefaan Decoutere; Kazutoshi Kobayashi (IEICE Electron. Express, 2019)