Analysis of the effect of the gate oxide breakdown on SRAM stability. - Rosana Rodríguez; James H. Stathis; Barry P. Linder; Steven P. Kowalczyk; Ching-Te Chuang; Rajiv V. Joshi; Gregory A. Northrop; Kerry Bernstein; Azeez J. Bhavnagarwala; Salvatore Lombardo (Microelectron. Reliab., 2002)

A Sub-600-mV, Fluctuation Tolerant 65-nm CMOS SRAM Array With Dynamic Cell Biasing. - Azeez J. Bhavnagarwala; Stephen Kosonocky; Carl Radens; Yuen H. Chan; Kevin Stawiasz; Uma Srinivasan 002; Steven P. Kowalczyk; Matthew M. Ziegler (IEEE J. Solid State Circuits, 2008)