A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. - Sneha Kabra; Harsupreet Kaur; Ritesh Gupta; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2006)

A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. - Parvesh Gangwani; Sujata Pandey; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2007)

Two-dimensional subthreshold analysis of sub-micron GaN MESFET. - Sneha Kabra; Harsupreet Kaur; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2007)

An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. - Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R. S. Gupta (Microelectron. J., 2007)

An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. - Pujarini Ghosh; Subhasis Haldar; R. S. Gupta; Mridula Gupta (Microelectron. J., 2012)

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. - Manoj Kumar; Subhasis Haldar; Mridula Gupta; R. S. Gupta (Microelectron. J., 2014)

An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. - Yogesh Pratap; Pujarini Ghosh; Subhasis Haldar; R. S. Gupta; Mridula Gupta (Microelectron. J., 2014)

Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. - Jay Hind K. Verma; Mridula Gupta; Subhasis Haldar; R. S. Gupta (ICM, 2015)

Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach. - Nisha Chugh; Subhasis Haldar; Monika Bhattacharya; R. S. Gupta (Microelectron. J., 2023)