High-Voltage Analog System for a Mobile NAND Flash. - Yong Hoon Kang; Jin-Kook Kim; Sang Won Hwang; Joon Young Kwak; Jun-Yong Park; Daeyong Kim; Chan Ho Kim; Jong-Yeol Park; Yong-Taek Jeong; Jong Nam Baek; Su Chang Jeon; Pyungmoon Jang; et al. (IEEE J. Solid State Circuits, 2008)

Reliability assessment of 1.55-µm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests. - Keun Ho Rhew; Su Chang Jeon; Dae Hee Lee; Byueng-Su Yoo; Ilgu Yun (Microelectron. Reliab., 2009)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. - Seungjae Lee 001; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim 004; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (ISSCC, 2016)

A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. - Dongku Kang; Minsu Kim 004; Suchang Jeon; Wontaeck Jung; Jooyong Park; Gyo Soo Choo; Dong-Kyo Shim; Anil Kavala; Seungbum Kim; Kyung-Min Kang; Jiyoung Lee; Kuihan Ko; et al. (ISSCC, 2019)

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. - Wontaeck Jung; Hyunggon Kim; Do-Bin Kim; Tae-Hyun Kim; Nam-Hee Lee; Dongjin Shin; Minyoung Kim; Youngsik Rho; Hun-Jong Lee; Yujin Hyun; Jaeyoung Park; Taekyung Kim; et al. (ISSCC, 2024)