Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm. - Eunsung Park; Won-Yong Ha; Doyoon Eom; Dae-Hwan Ahn; Hyuk An; Suhyun Yi; Kyung-Do Kim; Jongchae Kim; Woo-Young Choi; Myung-Jae Lee (VLSI Technology and Circuits, 2023)

A 336 x 240 Backside-Illuminated 3D-Stacked 7μm SPAD for LiDAR Sensor with PDE 28% at 940nm and under 0.4% Depth Accuracy Up to 10m. - Jaehyung Jang; Jongchae Kim; Sunho Oh; Kyungsu Byun; Dahwan Park; Jihee Han; Hanseung Lee; Suhyun Yi; Hoonmoo Choi; Jongeun Kim; Namil Kim; Yongtae Gim; et al. (VLSI Technology and Circuits, 2024)