7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. - Seungjae Lee 001; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim 004; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (ISSCC, 2016)

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. - Seungjae Lee 001; Chulbum Kim; Minsu Kim 004; Sung-Min Joe; Joonsuc Jang; Seungbum Kim; Kangbin Lee; Jisu Kim; Jiyoon Park; Hanjun Lee; Min-Seok Kim; Seonyong Lee; et al. (ISSCC, 2018)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (ISSCC, 2020)

Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time. - Hyemin Choe; Jeongju Jee; Seung-Chan Lim; Sung-Min Joe; Il-Han Park; Hyuncheol Park (IEEE Access, 2020)

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory. - Wandong Kim; Dae-Seok Byeon; Sung-Min Joe; Jinyub Lee; Jai Hyuk Song (ICEIC, 2022)