A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme. - Kang-Deog Suh; Byung-Hoon Suh; Young-Ho Lim; Jin-Ki Kim; Young-Joon Choi; Yong-Nam Koh; Sung-Soo Lee; Suk-Chon Kwon; Byung-Soon Choi; Jin-Sun Yum; Jung-Hyuk Choi; Jang-Rae Kim; et al. (IEEE J. Solid State Circuits, 1995)

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed. - Jin-Ki Kim; Koji Sakui; Sung-Soo Lee; Yasuo Itoh; Suk-Chon Kwon; Kazuhisa Kanazawa; Ki-Jun Lee; Hiroshi Nakamura; Kang-Young Kim; Toshihiko Himeno; Jang-Rae Kim; Kazushige Kanda; et al. (IEEE J. Solid State Circuits, 1997)

High-performance 1-Gb-NAND flash memory with 0.12-μm technology. - June Lee; Heung-Soo Im; Dae-Seok Byeon; Kyeong-Han Lee; Dong-Hyuk Chae; Kyong-Hwa Lee; Sang Won Hwang; Sung-Soo Lee; Young-Ho Lim; Jae-Duk Lee; Jung-Dal Choi; Young-Il Seo; et al. (IEEE J. Solid State Circuits, 2002)

A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications. - June Lee; Sung-Soo Lee; Oh-Suk Kwon; Kyeong-Han Lee; Dae-Seok Byeon; In-Young Kim; Kyoung-Hwa Lee; Young-Ho Lim; Byung-Soon Choi; Jong-Sik Lee; Wang-Chul Shin; Jeong-Hyuk Choi; et al. (IEEE J. Solid State Circuits, 2003)

Enhanced Urban Path Loss Prediction Model with New Correction Factors. - Do-Young Kwak; Chang-Hoon Lee; Seong-Cheol Kim; Jae-Woo Lim; Sung-Soo Lee (IEICE Trans. Commun., 2006)