Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production. - Soochan Chung; Dong-Hyeon Ko; Joonsung Lim; Kyungmoon Kim; Sejie Takaki; Yujeong Seo; Byoungil Lee; Sejun Park; Jaeduk Lee; Kyungyoon Noh; Sujin Ahn; Sunghoi Hur (IMW, 2023)

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND. - Suhwan Lim; Samki Kim; Changhee Lee; Hyeongwon Choi; Nambin Kim; Jaehun Jung; Hanvit Yang; Tae-Hun Kim; Junhee Lim; Daewon Ha; Sunghoi Hur; Jae-hoon Jang; et al. (IMW, 2023)

A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. - Youngmin Jo; Anil Kavala; Tongsung Kim; Byung-Kwan Chun; Jungjune Park; Taesung Lee; Jungmin Seo; Manjae Yang; Taehyeon Park; Hyunjin Kwon; Cheolhui Lee; Younghoon Son; et al. (VLSI Technology and Circuits, 2023)

High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash. - Kyungmoon Kim; Yujeong Seo; Sejun Park; Woojae Jang; Dongho Yoo; Joonsung Lim; Il-Han Park; Jaeduk Lee; Kyungyoon Noh; Sujin Ahn; Sunghoi Hur (VLSI Technology and Circuits, 2023)

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory. - Changhwan Lee; Min-Tai Yu; Sejun Park; Hoki Lee; Bio Kim; Suhwan Lim; Jaeduk Lee; Sung-Hun Lee; Mincheol Park; Sujin Ahn; Sunghoi Hur (VLSI Technology and Circuits, 2023)

Kernel Smoothing Technique Based on Multiple-Coordinate System for Screening Potential Failures in NAND Flash Memory. - Gooyoung Kim; Youngseon Moon; Jongmin Kim; Jaeyong Jeong; Eun-Kyoung Kim; Sunghoi Hur (VTS, 2023)

NORNS: Three Guides for Efficient Automatic Post-Fabrication Optimization of Modern NAND Flash Memory. - Earl Kim; Hyunuk Cho; Sungjun Cho; Myungsuk Kim; Jisung Park 001; Jaeyong Jeong; Eunkyoung Kim; Sunghoi Hur (ICCAD, 2024)

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate. - Wontaeck Jung; Hyunggon Kim; Do-Bin Kim; Tae-Hyun Kim; Nam-Hee Lee; Dongjin Shin; Minyoung Kim; Youngsik Rho; Hun-Jong Lee; Yujin Hyun; Jaeyoung Park; Taekyung Kim; et al. (ISSCC, 2024)

Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory. - Sehoon Lee; Jieun Lee; Sungpil Jang; Sujeong Kim; Choelgyu Kim; Narae Jeong Sae-Jin Kim; Jisoo Kang; Juhee Hong; Dong-Kyu Kim; Junhee Lim; Sejun Park; Seungwan Hong; et al. (VLSI Technology and Circuits, 2024)

Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory. - Hang-Ah Park; Sejun Park; Min-Tai Yu; Ye-Chan Kim; Cheon Ho Park; Jung Hoon Lee; Jun Eon Jin; Dawoon Jeung; Hauk Han; Tai-Soo Lim; Min-Kyu Jeong; Mincheol Park; et al. (VLSI Technology and Circuits, 2024)

On-Chip Capacitors with Wall-Type Structure in 9th Generation 3D VNAND Flash Memory. - Taegon Lee; Ji-Eun Ha; Kang-In Lee; Jung-Hwan Lee; Hyung-Geun Yook; In-Chul Shin; Jang-Hwan Jeong; Minkyu Kang; Joonsung Lim; Kyungyoon Noh; Seungwan Hong; Sunghoi Hur (IMW, 2025)

Development of Innovative Self-Aligned SSL Mold (SASM) Scheme with Remarkable Reduction of Chip Size. - Junyoung Lee; Minkyu Jeong; Sejun Park; Joonam Kim; Joonghyeob Shin; Jongyoon Choi; Jihoon Choi; Byungsoo Kim; Yujeong Seo; Gilsung Lee; Dongsik Lee; Joon Kim; et al. (IMW, 2025)

First Demonstration of Threshold Voltage Modeling in Multi-Hole V-NAND Flash Architecture with Noncircular Channel Hole Profiles. - Chanyang Park; Min-Kyu Jeong; Taein Lee; Sejun Park; Jung Hoon Lee; Yujin Lee; Seungwan Hong; Sunghoi Hur (IMW, 2025)

Innovative V-NAND Flash Structure with Dual Trap Layer for Future Generations of Multi-Bit Device. - Jeongyoon Yeo; Joonsung Kim; Younghwan Son; Taein Lee; Sejun Park; Min-Kyu Jeong; Jung Hoon Lee; Suk-Kang Sung; Dongku Kang; Seungwan Hong; Sunghoi Hur (IMW, 2025)

New Burnout Failure at the Chip Edge: Analysis and Preventive Design by a Novel Experimental Approach. - Seungmin Lee; Taegon Lee; Gaeun Kim; Kwang-Ryul Lee; Eunji An; Sekwon Hong; Sungjun Kim; Soonkwan Kang; Seokwoo Hong; Hwan Cha; Minkyu Kang; Jaesun Yun; et al. (IRPS, 2025)

30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs. - Sang-Soo Park; Jaedoeg Lyu; Myungjun Kim; Jaeyun Lee; Youngsun Song; Chungho Yu; Makoto Hirano; Yongseok Kwon; Jonghoon Park; Hojoon Kim; Daein Lee; Donghyun Seo; et al. (ISSCC, 2025)