Performance assessment of commercial gallium nitride-on-silicon discrete power devices with figure of merit. - Sungyoung Song; Stig Munk-Nielsen; Christian Uhrenfeldt; Ionut Trintis (IECON, 2016)

Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test. - Sungyoung Song; Stig Munk-Nielsen; Christian Uhrenfeldt (Microelectron. Reliab., 2017)