Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate. - Mina Asghari Heidarlou; B. Jariwala; Paolo Paletti; S. Rouvimov; J. A. Robinsorr; Susan K. Fullerton-Shirey; Alan C. Seabaugh (DRC, 2018)

Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures. - Shruti Subramania; Ke Xu; Simon K. Moser; Donna Deng; Jun Li; Randall M. Feenstra; Susan K. Fullerton-Shirey; Joshua A. Robinson (DRC, 2019)