Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. - David L. Harame; Kim M. Newton; Raminderpal Singh; Susan L. Sweeney; Sue E. Strang; Jeffrey B. Johnson; Scott M. Parker; Carl E. Dickey; Mete Erturk; Greg J. Schulberg; Donald L. Jordan; David C. Sheridan; et al. (IBM J. Res. Dev., 2003)

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices. - Usha Gogineni; Hongmei Li; Jesús A. del Alamo; Susan L. Sweeney; Jing Wang; Basanth Jagannathan (IEEE J. Solid State Circuits, 2010)

SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via. - Jingyang Zhang; Dawn Wang; Hanyi Ding; John Gillis; Wan Ni; Susan L. Sweeney; Dasheng Fang (ASICON, 2011)