A 45-ns 16-Mbit DRAM with triple-well structure. - Syuso Fujii; Masaki Ogihara; Mitsuru Shimizu; Munehiro Yoshida; Kenji Numata; Takahiko Hara; Shigeyoshi Watanabe; Shizuo Sawada; Tomohisa Mizuno; Junpei Kumagai; Susumu Yoshikawa; Sejii Kaki; et al. (IEEE J. Solid State Circuits, 1989)

A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. - Takahiko Hara; Koichi Fukuda; Kazuhisa Kanazawa; Noboru Shibata; Koji Hosono; Hiroshi Maejima; Michio Nakagawa; Takumi Abe; Masatsugu Kojima; Masaki Fujiu; Yoshiaki Takeuchi; Kazumi Amemiya; et al. (IEEE J. Solid State Circuits, 2006)

A 70 nm 16 Gb 16-Level-Cell NAND flash Memory. - Noboru Shibata; Hiroshi Maejima; Katsuaki Isobe; Kiyoaki Iwasa; Michio Nakagawa; Masaki Fujiu; Takahiro Shimizu; Mitsuaki Honma; Satoru Hoshi; Toshimasa Kawaai; Kazunori Kanebako; Susumu Yoshikawa; et al. (IEEE J. Solid State Circuits, 2008)

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. - Cuong Trinh; Noboru Shibata; Takeshi Nakano; Mikio Ogawa; Jumpei Sato; Yoshikazu Takeyama; Katsuaki Isobe; Binh Le; Farookh Moogat; Nima Mokhlesi; Kenji Kozakai; Patrick Hong; et al. (ISSCC, 2009)