Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. - Swagata Bhattacherjee; Abhijit Biswas (Microelectron. Reliab., 2011)

Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. - Abhijit Biswas; Swagata Bhattacherjee (Microelectron. Reliab., 2013)

Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate. - Abhijit Biswas; Swagata Bhattacherjee (Microelectron. Reliab., 2014)