Heterojunction bipolar transistors for millimeter waves applications: trends and achievements. - Sylvain L. Delage (Ann. des Télécommunications, 2001)

Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. - Cezary Sydlo; Bastian Mottet; Husin Ganis; Hans L. Hartnagel; Viktor Krozer; Sylvain L. Delage; Simone Cassette; Eric Chartier; D. Floriot; Steven Bland (Microelectron. Reliab., 2001)

Wide band gap semiconductor reliability : Status and trends. - Sylvain L. Delage; Christian Dua (Microelectron. Reliab., 2003)

Reliability Investigation of Gallium Nitride HEMT. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; V. Hoel; Sylvain L. Delage; N. Chaturvedi; Richard Lossy; Joachim Würfl (Microelectron. Reliab., 2004)

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. - A. Sozza; Christian Dua; Erwan Morvan; Bertrand Grimbert; Sylvain L. Delage (Microelectron. Reliab., 2005)

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. - Jaroslav Kovác; Alexander Satka; Ales Chvála; D. Donoval; Peter Kordos; Sylvain L. Delage (Microelectron. Reliab., 2012)

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. - Isabella Rossetto; Fabiana Rampazzo; Riccardo Silvestri; Alberto Zanandrea; Christian Dua; Sylvain L. Delage; Mourad Oualli; Matteo Meneghini; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2013)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. - Mourad Oualli; Christian Dua; O. Patard; P. Altuntas; S. Piotrowicz; Piero Gamarra; Cedric Lacam; J.-C. Jacquet; L. Teisseire; D. Lancereau; Eric Chartier; C. Potier; et al. (Microelectron. Reliab., 2018)