Body effect induced wear-out acceleration in ultra-thin oxides. - Sylvie Bruyère; David Roy 001; E. Robilliart; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. - Emilie Deloffre; L. Montès; Gérard Ghibaudo; Sylvie Bruyère; Serge Blonkowski; Stéphane Bécu; Mickael Gros-Jean; Sébastien Crémer (Microelectron. Reliab., 2005)

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2007)

Impact of silicon nitride CESL on NLDEMOS transistor reliability. - Gaelle Beylier; Sylvie Bruyère; Darcy Benoit; Gérard Ghibaudo (Microelectron. Reliab., 2008)