High Performance 150 mm RF GaN Technology with Low Memory Effects. - K. Moore; B. Green; S. Klingbeil; C. Rampley; P. Renaud; D. Burdeaux; D. Hill; C. Zhu; J. Wan; J. Finder; K. Kim; C. Gaw; et al. (BCICTS, 2020)

High Performance 0.25µm GaN Technology with Low Memory Effects. - Bernhard Grote; Bruce Green; C. Gaw; Y. Wei; D. Hill; Philippe Renaud; J. Wan; C. Rampley; David Burdeaux; K. Foxx; M. Vadipour; D. Currier; et al. (BCICTS, 2023)