Performance and reliability improvement of flash device by a novel programming method. - Chia-Huai Ho; Kuei-Shu Chang-Liao; Ya-Nan Huang; Tien-Ko Wang; T. C. Lu (Microelectron. Reliab., 2007)

Terahertz band-gap in InAs/GaSb type-II superlattices. - L. L. Li; Wen Xu; Z. Zeng; Anthony R. Wright; Chao Zhang 002; J. Zhang; Y. L. Shi; T. C. Lu (Microelectron. J., 2009)

Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. - Wen Xu; Z. Zeng; Anthony R. Wright; Chao Zhang 002; J. Zhang; T. C. Lu (Microelectron. J., 2009)

Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory. - T. W. Lin; S. H. Ku; C. H. Cheng; C. W. Lee; Ijen Huang; Wen-Jer Tsai; T. C. Lu; W. P. Lu; K. C. Chen; Tahui Wang; Chih-Yuan Lu (IRPS, 2018)

Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method. - Y. H. Liu; H. Y. Lin; C. M. Jiang; Tahui Wang; W. J. Tsai; T. C. Lu; K. C. Chen; Chih-Yuan Lu (IRPS, 2018)

A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell Program. - Y. L. Chou; W. J. Tsai; G. W. Wu; W. Chang; T. C. Lu; K. C. Chen; C. Y. Lu (IRPS, 2023)