Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. - M. Azzaz; A. Benoist; Elisa Vianello; Daniele Garbin; Eric Jalaguier; Carlo Cagli; C. Charpin; Stefania Bernasconi; Simon Jeannot; T. Dewolf; G. Audoit; C. Guedj; et al. (ESSDERC, 2015)

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes. - J. Laguerre; Marc Bocquet; Olivier Billoint; Simon Martin 006; Jean Coignus; Catherine Carabasse; Thomas Magis; T. Dewolf; François Andrieu; Laurent Grenouillet (IMW, 2023)