Morphological and optical properties of p-type GaAs(001) layers doped with silicon. - T. E. Lamas; Sandro Martini; M. J. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. - C. S. Sergio; Guennadii Michailovich Gusev; A. A. Quivy; T. E. Lamas; J. R. Leite; O. Estibals; J. C. Portal (Microelectron. J., 2003)

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum. - M. J. da Silva; Sandro Martini; T. E. Lamas; A. A. Quivy; E. C. F. da Silva; J. R. Leite (Microelectron. J., 2003)