Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. - Alberto Marcuzzi; M. Avramenko; Carlo De Santi; Peter Moens; G. J. Gomez Garcia; A. Feng; T. Grasser; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2025)