The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. - G. Innertsberger; T. Pompl; Martin Kerber (Microelectron. Reliab., 2001)

Soft breakdown and hard breakdown in ultra-thin oxides. - T. Pompl; C. Engel; H. Wurzer; Martin Kerber (Microelectron. Reliab., 2001)

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. - T. Pompl; A. Kerber; M. Röhner; Martin Kerber (Microelectron. Reliab., 2006)