Selecting an appropriate ESD protection for discrete RF power LDMOSTs. - Theo Smedes; J. de Boet; T. Rödle (Microelectron. Reliab., 2007)

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. - Maximilian Dammann; W. Pletschen; Patrick Waltereit; Wolfgang Bronner; Rüdiger Quay; Stefan Müller; Michael Mikulla; Oliver Ambacher; P. J. van der Wel; S. Murad; T. Rödle; R. Behtash; et al. (Microelectron. Reliab., 2009)

Qualification of 50 V GaN on SiC technology for RF power amplifiers. - P. J. van der Wel; T. Rödle; Benoit Lambert; Hervé Blanck; Maximilian Dammann (Microelectron. Reliab., 2013)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)