Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. - Patrick G. Whiting; Nicholas G. Rudawski; M. R. Holzworth; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren (Microelectron. Reliab., 2012)

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. - Patrick G. Whiting; M. R. Holzworth; A. G. Lind; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren; Y. Xin (Microelectron. Reliab., 2017)

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. - Patrick G. Whiting; Nicholas G. Rudawski; M. R. Holzworth; Stephen J. Pearton; Kevin S. Jones; Lu Liu 011; T. S. Kang; Fan Ren (Microelectron. Reliab., 2017)