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Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed. - Hitoshi Saito; Jun'ichi Watanabe; J. Seino; Tetsuro Tamura; Naoya Sashida; Kota Hara; Kuninori Kawabata; Atsushi Fujii; Jun Ohno; Atsushi Nakakubo; Manabu Kojima; T. Shimoyama; et al. (IMW, 2021)