Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. - K. Ben Ali; P. M. Gammon; C. W. Chan; F. Li; V. Pathirana; T. Trajkovic; Farzan Gity; Denis Flandre; Valeria Kilchytska (ESSDERC, 2017)