300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scaling. - Kirby Maxey; C. H. Naylor; K. P. O'Brien; A. Penumatcha; Adedapo Oni; C. Mokhtarzadeh; C. J. Dorow; C. Rogan; B. Holybee; T. Tronic; D. Adams; N. Arefin; et al. (VLSI Technology and Circuits, 2022)

Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS. - S.-C. Chang; C. Neumann; B. Granados Alpizar; S. Atanasov; J. Peck; N. Kabir; Y.-C. Liao; S. Shivaraman; Wriddhi Chakraborty; N. Haratipour; I-Cheng Tung; V. Nikitin; et al. (VLSI Technology and Circuits, 2024)

Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length. - W. Mortelmans; P. Buragohain; C. Rogan; A. Kitamura; C. J. Dorow; K. P. O'Brien; R. Ramamurthy; J. Lux; T. Zhong; S. Harlson; E. Gillispie; T. Wilson; et al. (VLSI Technology and Circuits, 2024)