An SOI structure for flash A/D converter. - Toshio Kumamoto; Masao Nakaya; Shigeru Kusunoki; Tadashi Nishimura; Nobuharu Yazawa; Yoichi Akasaka; Yasutaka Horiba (IEEE J. Solid State Circuits, 1988)

A 21-mW 4-Mb CMOS SRAM for battery operation. - Shuji Murakami; Kore-aki Fujita; Motomu Ukita; Kazuhito Tsutsumi; Yasuo Inoue; Osamu Sakamoto; Motoi Ashida; Yasumasa Nishimura; Yoshio Kohno; Tadashi Nishimura; Kenji Anami (IEEE J. Solid State Circuits, 1991)

An experimental 256-Mb DRAM with boosted sense-ground scheme. - Mikio Asakura; Tsukasa Ooishi; Masaki Tsukude; Shigeki Tomishima; Takahisa Eimori; Hideto Hidaka; Yoshikazu Ohno; Kazutani Arimoto; Kazuyasu Fujishima; Tadashi Nishimura; Tsutomu Yoshihara (IEEE J. Solid State Circuits, 1994)

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology. - Katsuhiro Suma; Takahiro Tsuruda; Hideto Hidaka; Takahisa Eimori; Toshiyuki Oashi; Yasuo Yamaguchi; Toshiaki Iwamatsu; Masakazu Hirose; Fukashi Morishita; Kazutarni Arimoto; Kazuyasu Fujishima; Yasuo Inoue; et al. (IEEE J. Solid State Circuits, 1994)