A 1.2V 64Gb 341GB/S HBM2 stacked DRAM with spiral point-to-point TSV structure and improved bank group data control. - Jin-Hee Cho; Jihwan Kim; Wooyoung Lee; Dong-Uk Lee; Tae-Kyun Kim 002; Heat Bit Park; Chunseok Jeong; Myeong-Jae Park; Seung Geun Baek; Seokwoo Choi; Byung Kuk Yoon; Young Jae Choi; et al. (ISSCC, 2018)

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. - Jinhyung Lee; Kyungjun Cho; Chang Kwon Lee; Yeonho Lee 002; Jae-Hyung Park; Su-Hyun Oh; Yucheon Ju; Chunseok Jeong; Ho Sung Cho; Jaeseung Lee; Tae-Sik Yun; Jin Hee Cho; et al. (ISSCC, 2024)