A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM. - Hongil Yoon; Gi-Won Cha; Changsik Yoo; Nam-Jong Kim; Keum-Yong Kim; Chang Ho Lee; Kyu-Nam Lim; Kyuchan Lee; Jun-Young Jeon; Tae Sung Jung; Hongsik Jeong; Tae-Young Chung; et al. (IEEE J. Solid State Circuits, 1999)