A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. - Daeyeal Lee; Ik Joon Chang; Sangyong Yoon; Joonsuc Jang; Dong-Su Jang; Wook-Ghee Hahn; Jong-Yeol Park; Doo-Gon Kim; Chiweon Yoon; Bong-Soon Lim; ByungJun Min; Sung-Won Yun; et al. (ISSCC, 2012)

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. - Chulbum Kim; Jinho Ryu; Tae-Sung Lee; Hyunggon Kim; Jaewoo Lim; Jaeyong Jeong; Seonghwan Seo; Hongsoo Jeon; Bokeun Kim; Inyoul Lee; Dooseop Lee; Pansuk Kwak; et al. (IEEE J. Solid State Circuits, 2012)

A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. - Jang-Woo Lee; Dae-Hoon Na; Anil Kavala; Hwasuk Cho; Junha Lee; Manjae Yang; Eunjin Song; Tongsung Kim; Seon-Kyoo Lee; Dong-Su Jang; Byung-Kwan Chun; Youngmin Jo; et al. (VLSI Circuits, 2020)

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. - Dae-Hoon Na; Jang-Woo Lee; Seon-Kyoo Lee; Hwasuk Cho; Junha Lee; Manjae Yang; Eunjin Song; Anil Kavala; Tongsung Kim; Dong-Su Jang; Youngmin Jo; Ji-Yeon Shin; et al. (IEEE J. Solid State Circuits, 2021)