A comparative study of STT-MTJ based non-volatile flip-flops. - Taehui Na; Kyungho Ryu; Jisu Kim; Seung-Hyuk Kang; Seong-Ook Jung (ISCAS, 2013)

High-performance low-power magnetic tunnel junction based non-volatile flip-flop. - Taehui Na; Kyungho Ryu; Jisu Kim; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISCAS, 2014)

A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. - Jisu Kim; Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2014)

Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2014)

An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2014)

Comparative Study of Various Latch-Type Sense Amplifiers. - Taehui Na; Seung-Han Woo; Jisu Kim; Hanwool Jeong; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2014)

Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. - Taehui Na; Hanwool Jeong; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ICECS, 2015)

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. - Byungkyu Song; Taehui Na; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISLPED, 2015)

A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. - Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2015)

Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. - Byungkyu Song; Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2015)

Area-optimal sensing circuit designs in deep submicrometer STT-RAM. - Sara Choi; Taehui Na; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISCAS, 2016)

Equalization scheme analysis for high-density spin transfer torque random access memory. - Beomsang Yoo; Taehui Na; Byungkyu Song; Seong-Ook Jung; Jung Pill Kim; Seung-Hyuk Kang (ISOCC, 2016)

Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. - Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2016)

Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. - Sara Choi; Taehui Na; Jisu Kim; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. - Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Jisu Kim; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2016)

Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE J. Solid State Circuits, 2017)

A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. - Byungkyu Song; Taehui Na; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2017)

Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. - Taehui Na; Byungkyu Song; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. I Regul. Pap., 2018)

Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. - Taehui Na; Byungkyu Song; Sara Choi; Jung Pill Kim; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Very Large Scale Integr. Syst., 2019)

Novel MTJ-Based Sensing Inverter Variation Tolerant Nonvolatile Flip-Flop in the Near-Threshold Voltage Region. - Gwang Hui Choi; Taehui Na (IEEE Access, 2020)

Robust Offset-Cancellation Sensing-Circuit-Based Spin-Transfer-Torque Nonvolatile Flip-Flop. - Taehui Na (IEEE Access, 2020)

Offset Voltage Analysis and Enable Signal Rise Time Control Based Offset Reduction Technique of Current-Latched Sense Amplifier. - Taehui Na (ICEIC, 2021)

STT-MRAM Sensing: A Review. - Taehui Na; Seung-Hyuk Kang; Seong-Ook Jung (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

Offset-Canceling Current-Latched Sense Amplifier With Slow Rise Time Control and Reference Voltage Biasing Techniques. - Bayartulga Ishdorj; Doyeon Kim; Seongmin Ahn; Taehui Na (IEEE Trans. Circuits Syst. I Regul. Pap., 2023)

Ternary Output Binary Neural Network With Zero-Skipping for MRAM-Based Digital In-Memory Computing. - Taehui Na (IEEE Trans. Circuits Syst. II Express Briefs, 2023)

Spin-Transfer-Torque Magnetic-Tunnel-Junction-Based Low-Power Nonvolatile Flip-Flop Designs in the Subthreshold Voltage Region. - Bayartulga Ishdorj; Taehui Na (IEEE Trans. Very Large Scale Integr. Syst., 2023)

Analysis of Low Area Digital Up/Down Clipping Counter for Digital In-Memory Computing. - Siyeol Lee; Geonwoo Lee; Seongmin Ahn; Taehui Na (IEEE Access, 2025)

Offset-Tolerant Body-Biased Sense Amplifier With Rise-Time Control Technique for SRAM. - Jaehwan Kim; Mingu Han; Bayartulga Ishdorj; Taehui Na (IEEE Trans. Circuits Syst. II Express Briefs, 2025)