Record-Low EOT(3.6Å) & Jleak(7×10-8A/cm2@0.8V) HZO by Dielectric-Selective Microwave Annealing. - Hunbeom Shin; Giuk Kim; Sujeong Lee; Geonhyeong Kang; Hyojun Choi; Taeseung Jung; Sanghun Jeon; Hyung-Jun Kim; Jinho Ahn (IRPS, 2025)