Key Technologies for 500 MHz VLSI Test System "ULTIMATE". - Teruo Tamama; Naoaki Narumi; Tai-ichi Otsuji; Masao Suzuki; Tsuneta Sudo (ITC, 1988)

A 10-ps resolution, process-insensitive timing generator IC. - Tai-ichi Otsuji; Naoaki Narumi (IEEE J. Solid State Circuits, 1989)

A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement. - Tai-ichi Otsuji (ITC, 1991)

A 3-ns range, 8-ps resolution, timing generator LSI utilizing Si bipolar gate array. - Tai-ichi Otsuji; Naoaki Narumi (IEEE J. Solid State Circuits, 1991)

A picosecond-accuracy, 700-MHz range, Si bipolar time interval counter LSI. - Tai-ichi Otsuji (IEEE J. Solid State Circuits, 1993)

A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET. - Koichi Murata; Taiichi Otsuji; Eiichi Sano; Masanobu Ohhata; Minoru Togashi; Masao Suzuki (IEEE J. Solid State Circuits, 1995)

40-Gb/s ICs for future lightwave communications systems. - Taiichi Otsuji; Yuhki Imai; Eiichi Sano; Shunji Kimura; Satoshi Yamaguchi; Mikio Yoneyama; Takatomo Enoki; Yohtaro Umeda (IEEE J. Solid State Circuits, 1997)

A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs. - Taiichi Otsuji; Mikio Yoneyama; Koichi Murata; Eiichi Sano (IEEE J. Solid State Circuits, 1997)

High-speed GaAs MESFET Digital IC Design for Optical Communication Systems. - Kimikazu Sano; Koichi Narahara; Koichi Murata; Taiichi Otsuji; Kiyomitsu Onodera (ASP-DAC, 1998)

A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's. - Koichi Murata; Taiichi Otsuji; Mikio Yoneyama; Masami Tokumitsu (IEEE J. Solid State Circuits, 1998)

An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs. - Taiichi Otsuji; Koichi Murata; Takatomo Enoki; Yohtaro Umeda (IEEE J. Solid State Circuits, 1998)

Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s. - Shunji Kimura; Taiichi Otsuji; Hiroyuki Kikuchi; Koichi Murata; Eiichi Sano (ISCAS (2), 1999)

40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs. - Yutaka Miyamoto; Mikio Yoneyama; Taiichi Otsuji; Kazushige Yonenaga; Naofumi Shimizu (IEEE J. Solid State Circuits, 1999)

A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure. - Koichi Murata; Taiichi Otsuji; Yuhki Imai; Suehiro Sugitani (IEEE J. Solid State Circuits, 2000)

An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode. - Kimikazu Sano; Koichi Murata; Taiichi Otsuji; Tomoyuki Akeyoshi; Naofumi Shimizu; Eiichi Sano (IEEE J. Solid State Circuits, 2001)

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer. - Mitsuhiro Hanabe; Takuya Nishimura 001; Masaki Miyamoto; Taiichi Otsuji; Eiichi Sano (IEICE Trans. Electron., 2006)

Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer. - Takuya Nishimura 001; Mitsuhiro Hanabe; Masaki Miyamoto; Taiichi Otsuji; Eiichi Sano (IEICE Trans. Electron., 2006)

Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer. - Mitsuhiro Hanabe; Yahya Moubarak Meziani; Taiichi Otsuji; Eiichi Sano; Tanemasa Asano (IEICE Trans. Electron., 2007)

Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter. - Takuya Nishimura 001; Nobuhiro Magome; HyunChul Kang; Taiichi Otsuji (IEICE Trans. Electron., 2009)

Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. - Amine el Moutaouakil; Tsuneyoshi Komori; Kouhei Horiike; Tetsuya Suemitsu; Taiichi Otsuji (IEICE Trans. Electron., 2010)

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. - Tetsuya Kawasaki; Adrian Dobroiu; Takanori Eto; Yuki Kurita; Kazuki Kojima; Yuhei Yabe; Hiroki Sugiyama; Takayuki Watanabe; Susumu Takabayashi; Tetsuya Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; et al. (ESSDERC, 2013)

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. - Tomohiro Yoshida; Kengo Kobayashi; Taiichi Otsuji; Tetsuya Suemitsu (ESSDERC, 2013)

Site-Selective Epitaxy of Graphene on Si Wafers. - Hirokazu Fukidome; Yusuke Kawai; Hiroyuki Handa; Hiroki Hibino; Hidetoshi Miyashita; Masato Kotsugi; Takuo Ohkochi; Myung-Ho Jung; Tetsuya Suemitsu; Toyohiko Kinoshita; Taiichi Otsuji; Maki Suemitsu (Proc. IEEE, 2013)

High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. - Myung-Ho Jung; Goon-Ho Park; Tomohiro Yoshida; Hirokazu Fukidome; Tetsuya Suemitsu; Taiichi Otsuji; Maki Suemitsu (Proc. IEEE, 2013)

Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. - Kenta Sugawara; Tetsuya Kawasaki; Gen Tamamushi; Mastura B. Hussin; Adrian Dobroiu; Tomohiro Yoshida; Tetsuya Suemitsu; Hirokazu Fukidome; Maki Suemitsu; Victor Ryzhii; Katsumi Iwatsuki; Shigeru Kuwano; et al. (ECOC, 2015)

Graphene-Channel-Transistor Terahertz Amplifier. - Stephane Boubanga-Tombet; Deepika Yadav; Wojciech Knap; Vyacheslav V. Popov; Taiichi Otsuji (DRC, 2018)

UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion. - Yuya Omori; Tomotaka Hosotani; Taiichi Otsuji; Katsumi Iwatsuki; Akira Satou (OFC, 2019)

Fast terahertz detection by asymmetric dual-grating-gate graphene FET. - Koichi Tamura; Daichi Ogiura; Kento Suwa; Hirokazu Fukidome; Akira Satou; Yuma Takida; Hiroaki Minamide; Taiichi Otsuji (DRC, 2021)

Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids. - Taiichi Otsuji; Katsumi Iwatsuki; Hirohito Yamada; Masafumi Yashima (ISGT, 2021)

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications. - Michael S. Shur; Gregory Aizin; Taiichi Otsuji; Victor Ryzhii (Sensors, 2021)

Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. - Dai Nakajima; Kazuki Nishimura; Mitsuki Watanabe; Tsung-Tse Lin; Keisuke Kasai; Masato Yoshida; Tetsuya Suemitsu; Taiichi Otsuji; Akira Satou (OFC, 2023)

Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. - Chao Tang; Koichi Tamura; Aoi Hamada; Hiroyoshi Kudo; Shinnosuke Uchigasaki; Yuma Takida; Hiroaki Minamide; Tsung-Tse Lin; Akira Satou; Taiichi Otsuji (DRC, 2024)