Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light. - Taiki Nakazawa; Rihito Kuroda; Yasumasa Koda; Shigetoshi Sugawa (Sensors, Cameras, and Systems for Industrial and Scientific Applications, 2012)

A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack. - Yasumasa Koda; Rihito Kuroda; Taiki Nakazawa; Y. Nakao; Shigetoshi Sugawa (Sensors, Cameras, and Systems for Industrial and Scientific Applications, 2013)

A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure. - Takahiro Akutsu; Shun Kawada; Yasumasa Koda; Taiki Nakazawa; Rihito Kuroda; Shigetoshi Sugawa (IMSE, 2014)