Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. - Shoichi Shiba; Masaru Sato 001; Hiroshi Matsumura; Yoichi Kawano; Tsuyoshi Takahashi; Toshihide Suzuki; Yasuhiro Nakasha; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2015)

Fast atom bombardment onto vertically aligned multi-walled carbon nanotube bumps to achieve low interconnect resistance with Au layer. - Masahisa Fujino; Ikuo Soga; Daiyu Kondo; Yoshikatsu Ishizuki; Taisuke Iwai; Tadatomo Suga (Microelectron. Reliab., 2015)

13.3 A 56Gb/s W-band CMOS wireless transceiver. - Korkut Kaan Tokgoz; Shotaro Maki; Seitaro Kawai; Noriaki Nagashima; Jun Emmei; Masato Dome; Hisashi Kato; Jian Pang; Yoichi Kawano; Toshihide Suzuki; Taisuke Iwai; Yuuki Seo; et al. (ISSCC, 2016)

300-GHz Amplifier in 75-nm InP HEMT Technology. - Hiroshi Matsumura; Yoichi Kawano; Shoichi Shiba; Masaru Sato 001; Toshihide Suzuki; Yasuhiro Nakasha; Tsuyoshi Takahashi; Kozo Makiyama; Taisuke Iwai; Naoki Hara (IEICE Trans. Electron., 2016)

W-band ultra-high data-rate 65nm CMOS wireless transceiver. - Korkut Kaan Tokgoz; Shotaro Maki; Seitarou Kawai; Noriaki Nagashima; Yoichi Kawano; Toshihide Suzuki; Taisuke Iwai; Kenichi Okada 001; Akira Matsuzawa (ASP-DAC, 2017)

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. - Masaru Sato 001; Yoshitaka Niida; Toshihide Suzuki; Yasuhiro Nakasha; Yoichi Kawano; Taisuke Iwai; Naoki Hara; Kazukiyo Joshin (IEICE Trans. Electron., 2017)

A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver. - Korkut Kaan Tokgoz; Shotaro Maki; Jian Pang; Noriaki Nagashima; Ibrahim Abdo; Seitaro Kawai; Takuya Fujimura; Yoichi Kawano; Toshihide Suzuki; Taisuke Iwai; Kenichi Okada 001; Akira Matsuzawa (ISSCC, 2018)