Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor. - Hiroki Inoue; Takanori Matsuzaki; Shuhei Nagatsuka; Yutaka Okazaki; Toshinari Sasaki; Kousei Noda; Daisuke Matsubayashi; Takahiko Ishizu; Tatsuya Onuki; Atsuo Isobe; Yutaka Shionoiri; Kiyoshi Kato; et al. (IEEE J. Solid State Circuits, 2012)

Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating. - Hikaru Tamura; Kiyoshi Kato; Takahiko Ishizu; Tatsuya Onuki; Wataru Uesugi; Takuro Ohmaru; Kazuaki Ohshima; Hidetomo Kobayashi; Seiichi Yoneda; Atsuo Isobe; Naoaki Tsutsui; Suguru Hondo; et al. (COOL Chips, 2014)

A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor. - Atsuo Isobe; Hikaru Tamura; Kiyoshi Kato; Takuro Ohmaru; Wataru Uesugi; Takahiko Ishizu; Tatsuya Onuki; Kazuaki Ohshima; Takanori Matsuzaki; Atsushi Hirose; Yasutaka Suzuki; Naoaki Tsutsui; et al. (VLSIC, 2014)

Embedded SRAM and Cortex-M0 Core Using a 60-nm Crystalline Oxide Semiconductor. - Hikaru Tamura; Kiyoshi Kato; Takahiko Ishizu; Wataru Uesugi; Atsuo Isobe; Naoaki Tsutsui; Yasutaka Suzuki; Yutaka Okazaki; Yukio Maehashi; Jun Koyama; Yoshitaka Yamamoto; Shunpei Yamazaki; et al. (IEEE Micro, 2014)

16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. - Takanori Matsuzaki; Tatsuya Onuki; Shuhei Nagatsuka; Hiroki Inoue; Takahiko Ishizu; Yoshinori Ieda; Naoto Yamade; Hidekazu Miyairi; Masayuki Sakakura; Tomoaki Atsumi; Yutaka Shionoiri; Kiyoshi Kato; et al. (ISSCC, 2015)

A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. - Shuhei Maeda; Satoru Ohshita; Kazuma Furutani; Yuto Yakubo; Takahiko Ishizu; Tomoaki Atsumi; Yoshinori Ando; Daisuke Matsubayashi; Kiyoshi Kato; Takashi Okuda; Masahiro Fujita; Shunpei Yamazaki (ISSCC, 2018)

Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC. - Hiroki Inoue; Takeshi Aoki; Fumika Akasawa; Toshiki Hamada; Toshihiko Takeuchi; Kousei Nei; Takako Seki; Yuto Yakubo; Kei Takahashi; Shuji Fukai; Takahiko Ishizu; Munehiro Kozuma; et al. (ISSCC, 2019)

A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In-Ga-Zn Oxide BEOL-FETs. - Takahiko Ishizu; Yuto Yakubo; Kazuma Furutani; Atsuo Isobe; Masashi Fujita; Tomoaki Atsumi; Yoshinori Ando; Tsutomu Murakawa; Kiyoshi Kato; Masahiro Fujita; Shunpei Yamazaki (VLSI Circuits, 2019)