III-V-based low power CMOS devices on Si platform. - Shinichi Takagi; Daehwan Ahn; Takahiro Gotow; Munetaka Noguchi; Kouichi Nishi; SangHyeon Kim; Masafumi Yokoyama; Chih-Yu Chang; Sanghee Yoon; Chiaki Yokoyama; Mitsuru Takenaka (ICICDT, 2017)

MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI. - Shinichi Takagi; Kimihiko Kato; Wu-Kang Kim; Kwangwon Jo; Ryo Matsumura; Ryotaro Takaguchi; Dae-Hwan Ahn; Takahiro Gotow; Mitsuru Takenaka (ESSDERC, 2018)

Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. - Yasuyuki Miyamoto; Takahiro Gotow (IEICE Trans. Electron., 2020)