MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. - Youichi Takeda; Dondee Navarro; Shingo Chiba; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Tatsuya Ohguro; Takahiro Iizuka; Masahiko Taguchi; Shigetaka Kumashiro; Shunsuke Miyamoto (CICC, 2005)

Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. - Tatsuya Ezaki; Dondee Navarro; Youichi Takeda; Norio Sadachika; Gaku Suzuki; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Tatsuya Ohguro; Takahiro Iizuka; Masahiko Taguchi; Shigetaka Kumashiro; Shunsuke Miyamoto (Math. Comput. Simul., 2008)

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. - Masataka Miyake; Daisuke Hori; Norio Sadachika; Uwe Feldmann; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Takahiro Iizuka; Kazuya Matsuzawa; Yasuyuki Sahara; Teruhiko Hoshida; Toshiro Tsukada (IEICE Trans. Electron., 2009)

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. - Masataka Miyake; Daisuke Hori; Norio Sadachika; Uwe Feldmann; Mitiko Miura-Mattausch; Hans Jürgen Mattausch; Tatsuya Ohguro; Takahiro Iizuka; Masahiko Taguchi; Shunsuke Miyamoto (IEICE Trans. Electron., 2009)

Compact Modeling of Expansion Effects in LDMOS. - Takahiro Iizuka; Takashi Sakuda; Yasunori Oritsuki; Akihiro Tanaka; Masataka Miyake; Hideyuki Kikuchihara; Uwe Feldmann; Hans Jürgen Mattausch; Mitiko Miura-Mattausch (IEICE Trans. Electron., 2012)

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. - Takahiro Iizuka; Kenji Fukushima; Akihiro Tanaka; Hideyuki Kikuchihara; Masataka Miyake; Hans Jürgen Mattausch; Mitiko Miura-Mattausch (IEICE Trans. Electron., 2013)

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. - Chenyue Ma; Hans Jürgen Mattausch; Masataka Miyake; Takahiro Iizuka; Kazuya Matsuzawa; Seiichiro Yamaguchi; Teruhiko Hoshida; Akinori Kinoshita; Takahiko Arakawa; Jin He 003; Mitiko Miura-Mattausch (IEICE Trans. Electron., 2013)

Compact Modeling for Power Efficient Circuit Design. - Mitiko Miura-Mattausch; Hideyuki Kikuchihara; Tahahiro Kajiwara; Yuta Tanimoto; Atsushi Saito; Takahiro Iizuka; Dondee Navarro; Hans Jürgen Mattausch (ESSDERC, 2018)

Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs. - Takahiro Iizuka; Hiroyuki Hashigami; Mitiko Miura-Mattausch; Hans Jürgen Mattausch (ISDCS, 2019)

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. - Arnab Mukhopadhyay; Tapas Kumar Maiti; Sandip Bhattacharya; Takahiro Iizuka; Hideyuki Kikuchihara; Mitiko Miura-Mattausch; Hafizur Rahaman 001; Sadayuki Yoshitomi; Dondee Navarro; Hans Jürgen Mattausch (IEICE Trans. Electron., 2019)

History Effect on Circuit Performance of SOI-MOSFETs. - Soumajit Ghosh; Mitiko Miura-Mattausch; Takahiro Iizuka; Hideyuki Kikuchihara; Hafizur Rahaman 001; Hans Jürgen Mattausch (ISDCS, 2020)

Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. - Fernando Ávila Herrera; Mitiko Miura-Mattausch; Takahiro Iizuka; Hideyuki Kikuchihara; Yoko Hirano; Hans Jürgen Mattausch (ISDCS, 2020)

Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs. - Takahiro Iizuka (ISDCS, 2020)

History effect investigation in SOI MOSFET for minimizing impact on circuit performance. - Soumajit Ghosh; Takahiro Iizuka (ISDCS, 2021)

Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. - Abhishek Kar; Mitiko Miura-Mattausch; Mainak Sengupta; Dondee Navarro; Hideyuki Kikuchihara; Takahiro Iizuka; Hafizur Rahaman 001; Hans Jürgen Mattausch (IEEE Access, 2021)

Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits. - Subhajit Das 001; Takahiro Iizuka (ISDCS, 2023)