Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion. - Takahiro Mori; Shinsaku Hiura; Kosuke Sato (VISAPP (1), 2012)

Photometric Linearization by Robust PCA for Shadow and Specular Removal. - Takahiro Mori; Ryohei Taketa; Shinsaku Hiura; Kosuke Sato (VISIGRAPP (Selected Papers), 2012)

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. - Wataru Mizubayashi; Koichi Fukuda; Takahiro Mori; Kazuhiko Endo; Yongxun Liu; Takashi Matsukawa; Shin-ichi O'Uchi; Yuki Ishikawa; Shinji Migita; Yukinori Morita; Akihito Tanabe; Junichi Tsukada; et al. (ESSDERC, 2013)

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. - Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Akihito Tanabe; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin-ichi O'Uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2013)

Development of constant torque device and its application to power assist systems. - Yasuhiro Minamiyama; Takanori Kiyota; Takahiro Mori; Noboru Sugimoto (AIM, 2014)

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. - Shinji Migita; Takashi Matsukawa; Takahiro Mori; Koichi Fukuda; Yukinori Morita; Wataru Mizubayashi; Kazuhiko Endo; Yongxun Liu; Shin-ichi O'Uchi; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2014)

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. - Yukinori Morita; Takahiro Mori; Shinji Migita; Wataru Mizubayashi; Koichi Fukuda; Takashi Matsukawa; Kazuhiko Endo; Shin-ichi O'Uchi; Yongxun Liu; Meishoku Masahara; Hiroyuki Ota (ESSDERC, 2014)

PBTI for N-type tunnel FinFETs. - Wataru Mizubayashi; Takahiro Mori; Koichi Fukuda; Yongxun Liu; Takashi Matsukawa; Yuki Ishikawa; Kazuhiko Endo; Shin-ichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yukinori Morita; Shinji Migita; et al. (ICICDT, 2015)

Control moment gyroscope for swing motion control. - Takahiro Mori; Guillermo Enriquez; Huei Ee Yap; Shuji Hashimoto (ROBIO, 2015)

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers. - Shota Iizuka; Kimihiko Kato; Atsushi Yagishita; Hidehiro Asai; Tetsuya Ueda; Hiroshi Oka; Junichi Hattori; Tsutomu Ikegami; Koichi Fukuda; Takahiro Mori (VLSI Circuits, 2021)

A Cryogenic CMOS Current Comparator for Spin Qubit Readout Achieving Fast Readout Time and High Current Resolution. - Hiroshi Fuketa; Ippei Akita; Tomohiro Ishikawa; Hanpei Koike; Takahiro Mori (VLSI Technology and Circuits, 2022)

Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation. - Hiroshi Oka; Takumi Inaba; Shota Iizuka; Hidehiro Asai; Kimihiko Kato; Takahiro Mori (VLSI Technology and Circuits, 2022)

Silicon Technologies for Quantum Computing. - Takahiro Mori (ICICDT, 2023)

Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs. - Takumi Inaba; Hiroshi Oka; Hidehiro Asai; Hiroshi Fuketa; Shota Iizuka; Kimihiko Kato; Shunsuke Shitakata; Koichi Fukuda; Takahiro Mori (VLSI Technology and Circuits, 2023)

Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality. - Hiroshi Oka; Takumi Inaba; Shunsuke Shitakata; Kimihiko Kato; Shota Iizuka; Hidehiro Asai; Hiroshi Fuketa; Takahiro Mori (IEEE Access, 2023)

Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. - Shimpei Nishiyama; Kimihiko Kato; Yongxun Liu; Raisei Mizokuchi; Jun Yoneda; Tetsuo Kodera; Takahiro Mori (IEICE Trans. Electron., 2023)

A Cryogenic CMOS Current Integrator and Correlation Double Sampling Circuit for Spin Qubit Readout. - Hiroshi Fuketa; Ippei Akita; Tomohiro Ishikawa; Hanpei Koike; Takahiro Mori (IEEE Trans. Circuits Syst. I Regul. Pap., 2023)

Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. - Shunsuke Shitakata; Hiroshi Oka; Kimihiko Kato; Takumi Inaba; Shota Iizuka; Hidehiro Asai; Takahiro Mori (DRC, 2024)

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs. - Takumi Inaba; Hiroshi Oka; Hidehiro Asai; Hiroshi Fuketa; Shota Iizuka; Kimihiko Kato; Shunsuke Shitakata; Koichi Fukuda; Takahiro Mori (IEEE Access, 2024)

A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures. - Kiyoshi Takeuchi; Tomoko Mizutani; Takuya Saraya; Hiroshi Oka; Takahiro Mori; Shinichi Takagi; Masaharu Kobayashi; Toshiro Hiramoto (IRPS, 2025)