A 55-ns 16-Mb DRAM with built-in self-test function using microprogram ROM. - Toshio Takeshima; Masahide Takada; Hiroki Koike; Hiroshi Watanabe; Shigeru Koshimaru; Kenjiro Mitake; Wataru Kikuchi; Takaho Tanigawa; Tatsunori Murotani; Kenji Noda; Kazuhiro Tasaka; Koji Yamanaka; et al. (IEEE J. Solid State Circuits, 1990)

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function. - Akira Tanabe; Toshio Takeshima; Hiroki Koike; Yoshiharu Aimoto; Masahide Takada; Toshiyuki Ishijima; Naoki Kasai; Hiromitsu Hada; Kentaro Shibahara; Takemitsu Kunio; Takaho Tanigawa; Takanori Saeki; et al. (IEEE J. Solid State Circuits, 1992)

A 30-ns 256-Mb DRAM with a multidivided array structure. - Tadahiko Sugibayashi; Toshio Takeshima; Isao Naritake; Tatsuya Matano; Hiroshi Takada; Yoshiharu Aimoto; Koichiro Furuta; Mamoru Fujita; Takanori Saeki; Hiroshi Sugawara; Tatsunori Murotani; Naoki Kasai; et al. (IEEE J. Solid State Circuits, 1993)

Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor. - Yasushi Yamagata; Hiroki Shirai; Hirotoshi Sugimura; S. Arai; Tomoko Wake; Ken Inoue; Takashi Sakoh; Masato Sakao; Takaho Tanigawa (CICC, 2006)

An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz. - Masanori Natsui; Daisuke Suzuki; Akira Tamakoshi; Toshinari Watanabe; Hiroaki Honjo; Hiroki Koike; Takashi Nasuno; Yitao Ma; Takaho Tanigawa; Yasuo Noguchi; Mitsuo Yasuhira; Hideo Sato; et al. (ISSCC, 2019)

A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications. - Masanori Natsui; Daisuke Suzuki; Akira Tamakoshi; Toshinari Watanabe; Hiroaki Honjo; Hiroki Koike; Takashi Nasuno; Yitao Ma; Takaho Tanigawa; Yasuo Noguchi; Mitsuo Yasuhira; Hideo Sato; et al. (IEEE J. Solid State Circuits, 2019)

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (VLSI Circuits, 2020)

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition. - Masanori Natsui; Akira Tamakoshi; Hiroaki Honjo; Toshinari Watanabe; Takashi Nasuno; Chaoliang Zhang; Takaho Tanigawa; Hirofumi Inoue; Masaaki Niwa; Toru Yoshiduka; Yasuo Noguchi; Mitsuo Yasuhira; et al. (IEEE J. Solid State Circuits, 2021)

Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability. - K. Watanabe; T. Shimada; K. Hirose; H. Shindo; D. Kobayashi; Takaho Tanigawa; Shoji Ikeda; Takamitsu Shinada; Hiroki Koike; Tetsuo Endoh; T. Makino; Takeshi Ohshima (IRPS, 2022)