Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. - Takamasa Hamai; Kunifumi Suzuki; Reika Ichihara; Yusuke Higashi; Yoko Yoshimura; Kiwamu Sakuma; Kensuke Ota; Kota Takahashi; Kazuhiro Matsuo; Shosuke Fujii; Masumi Saitoh (IRPS, 2023)

A Vertical Channel-All-Around FeFET with Thermally Stable Oxide Semiconductor Achieving High ΔIon> 2µA/cell for 3D Stackable 4F2 High Speed Memory. - Shoichi Kabuyanagi; Takamasa Hamai; Masayuki Murase; Takeru Maeda; Masumi Saitoh; Shosuke Fujii (VLSI Technology and Circuits, 2024)