SrO capping effect for La2O3/Ce-silicate gate dielectrics. - Kuniyuki Kakushima; K. Okamoto; T. Koyanagi; M. Kouda; Kiichi Tachi; Takamasa Kawanago; J. Song; Parhat Ahmet; Hiroshi Nohira; Kazuo Tsutsui; Nobuyuki Sugii; Takeo Hattori; et al. (Microelectron. Reliab., 2010)

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. - Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kazuo Tsutsui; Kenji Natori; Takeo Hattori; Hiroshi Iwai (ESSDERC, 2012)

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. - Enrique Miranda 002; Takamasa Kawanago; Kuniyuki Kakushima; Jordi Suñé; Hiroshi Iwai (Microelectron. Reliab., 2012)

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. - Takamasa Kawanago; Kuniyuki Kakushima; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Kenji Natori; Hiroshi Iwai (ESSDERC, 2013)

Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics. - Takamasa Kawanago; Ryo Ikoma; Du Wanjing; Shunri Oda (ESSDERC, 2016)

La2O3 gate dielectrics for AlGaN/GaN HEMT. - J. Chen; Takamasa Kawanago; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; D. Nohata; Hiroshi Nohira; Kuniyuki Kakushima (Microelectron. Reliab., 2016)

Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs. - Takamasa Kawanago; Ryo Ikoma; Tomoaki Oba; Hiroyuki Takagi (ESSDERC, 2017)

Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET. - Takamasa Kawanago; Tomoaki Oba; Ryo Ikoma; Hiroyuki Takagi; Shunri Oda (ESSDERC, 2018)